Statements (29)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
gptkb:smartphone
transistor |
| gptkbp:advantage |
better performance at high frequencies
faster than silicon MESFET fragile substrate higher cost than silicon devices |
| gptkbp:application |
RF circuits
high-speed digital circuits microwave amplifiers |
| gptkbp:channel_material |
gptkb:gallium_arsenide
|
| gptkbp:discoveredBy |
1960s
|
| gptkbp:feature |
low noise
high frequency operation high electron mobility |
| gptkbp:gate_material |
metal
|
| https://www.w3.org/2000/01/rdf-schema#label |
GaAs MESFET
|
| gptkbp:material |
gptkb:gallium_arsenide
|
| gptkbp:relatedTo |
gptkb:battery
gptkb:JFET HEMT |
| gptkbp:structure |
metal-semiconductor junction
|
| gptkbp:used_in |
radar systems
satellite communications mixers oscillators cellular base stations low-noise amplifiers |
| gptkbp:bfsParent |
gptkb:ATF42C_series
|
| gptkbp:bfsLayer |
6
|