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gptkbp:instanceOf
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gptkb:SDRAM
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gptkbp:abbreviation
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gptkb:FeRAM
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gptkbp:alternativeTo
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gptkb:ReRAM
gptkb:EEPROM
gptkb:MRAM
Flash memory
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gptkbp:cellStructure
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1T-1C (one transistor, one capacitor)
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gptkbp:commercialized_by
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gptkb:Fujitsu
gptkb:Texas_Instruments
gptkb:Cypress_Semiconductor
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gptkbp:dataRetention
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10 years or more
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gptkbp:density
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lower than DRAM
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gptkbp:developedBy
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gptkb:Ramtron_International
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gptkbp:distinctFrom
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Flash memory
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https://www.w3.org/2000/01/rdf-schema#label
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Ferroelectric RAM
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gptkbp:introducedIn
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1980s
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gptkbp:main_ferroelectric_material
|
lead zirconate titanate (PZT)
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gptkbp:market_adoption
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limited
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gptkbp:not_affected_by
|
radiation therapy
magnetic fields
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gptkbp:offers
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low power consumption
high endurance
fast write speed
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gptkbp:operatingSystem
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low
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gptkbp:read_operation
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destructive
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gptkbp:read/write_endurance
|
10^12 cycles or more
|
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gptkbp:requires
|
refresh after read
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gptkbp:similarTo
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gptkb:SDRAM
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gptkbp:stores_data_by
|
polarization of ferroelectric material
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gptkbp:suitableFor
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embedded systems
low-power applications
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gptkbp:used_in
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medical devices
smart cards
RFID cards
industrial microcontrollers
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gptkbp:uses
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ferroelectric layer
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gptkbp:bfsParent
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gptkb:FRAM_infrastructure
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gptkbp:bfsLayer
|
6
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