gptkbp:instanceOf
|
gptkb:Company
|
gptkbp:application
|
Amplification
Switching
|
gptkbp:batteryCapacity
|
30 pF
|
gptkbp:bestTimeToVisit
|
-60 V
0 mA
|
gptkbp:coInventor
|
0 mA
|
gptkbp:communityInvolvement
|
-20 V
-60 V
|
gptkbp:crossover
|
0 V
|
gptkbp:dataUsage
|
Available online
|
gptkbp:drainageBasin
|
200 mA
0.5 Ohm
|
gptkbp:electrification
|
High
|
gptkbp:engineConfiguration
|
3-pin
|
gptkbp:enginePower
|
500 mW
|
gptkbp:fuelCapacity
|
50 pF
|
gptkbp:greatGrandfather
|
0 mA
|
https://www.w3.org/2000/01/rdf-schema#label
|
Fairchild 2N7000
|
gptkbp:inputOutput
|
30 pF
|
gptkbp:interchanges
|
60 MHz
|
gptkbp:is_a_source_of
|
200 mA
|
gptkbp:leads
|
Yes
|
gptkbp:localCuisine
|
-10 mA
|
gptkbp:manufacturer
|
gptkb:Fairchild_Semiconductor
|
gptkbp:maximumDepth
|
500 mW
10 mA
200 mA
20 V
60 V
|
gptkbp:maxTakeoffWeight
|
500 mW
|
gptkbp:nonPatentCitation
|
2-4 V
|
gptkbp:operationalStatus
|
-55 to 150 °C
|
gptkbp:packaging
|
TO-92
|
gptkbp:powers
|
500 mW
0 mW
|
gptkbp:raisesAwarenessAbout
|
2-4 V
|
gptkbp:relatedPatent
|
2N7001
BS170
|
gptkbp:successor
|
2N7002
|
gptkbp:tireSupplier
|
Yes
|
gptkbp:type
|
gptkb:N-channel_MOSFET
|
gptkbp:yearEstablished
|
1970
|