N-channel MOSFET

GPTKB entity

Properties (56)
Predicate Object
gptkbp:instanceOf gptkb:Company
gptkbp:hasAwards n-type semiconductor
gptkbp:hasCitations varies by design
gptkbp:hasFacility polysilicon
gptkbp:hasHistoricalSignificance P-channel MOSFET
gptkbp:hasParticipatedIn n-type semiconductor
gptkbp:hasRelatedPatent motor control
power supply circuits
gptkbp:hasSpecialty typically in nanometers
gptkbp:hasType Field-effect transistor
https://www.w3.org/2000/01/rdf-schema#label N-channel MOSFET
gptkbp:integration ICs
gptkbp:isAvailableIn through-hole technology
various package types
surface_mount_technology
gptkbp:isCharacterizedBy high reliability
high breakdown voltage
high input impedance
high switching speed
low leakage current
low on-resistance
low thermal resistance
fast switching times
high current handling capability
low gate current
robustness_against_ESD
gptkbp:isFundedBy silicon technology
gptkbp:isPartOf power management systems
gptkbp:isStudiedIn over-voltage conditions
gptkbp:isTestedFor thermal performance
electrical performance
gptkbp:isUsedFor analog circuits
digital circuits
LED drivers
power electronics
logic level signals
gptkbp:isUsedIn HVAC systems
automotive applications
consumer electronics
electric vehicles
industrial automation
medical devices
smart grid technology
solar inverters
renewable energy systems
battery management systems
telecommunications equipment
RF amplifiers
switching applications
power factor correction circuits
amplification applications
class D amplifiers
DC-DC_converters
gptkbp:isVisitedBy high-speed applications
gptkbp:operatedBy controlling current flow
gptkbp:requires positive gate-source voltage