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gptkbp:instanceOf
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gptkb:semiconductor_memory_technology
|
|
gptkbp:cellStructure
|
one transistor and one capacitor
|
|
gptkbp:competitor
|
gptkb:ReRAM
gptkb:SDRAM
gptkb:MRAM
SRAM
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|
gptkbp:component
|
gptkb:SDRAM
gptkb:HBM
gptkb:GDDR
gptkb:EDO_DRAM
gptkb:FPM_DRAM
gptkb:RDRAM
3D-stacked DRAM
Wide I/O DRAM
|
|
gptkbp:density
|
measured in gigabits (Gb)
|
|
gptkbp:developedBy
|
gptkb:IBM
|
|
gptkbp:fullName
|
Dynamic Random-Access Memory technology
|
|
gptkbp:futureTrends
|
lower power consumption
increased bandwidth
3D stacking
smaller process nodes
integration with logic chips
|
|
gptkbp:introducedIn
|
1970
|
|
gptkbp:inventedBy
|
gptkb:Robert_H._Dennard
|
|
gptkbp:manufacturer
|
gptkb:Samsung_Electronics
gptkb:Micron_Technology
gptkb:Winbond
gptkb:Nanya_Technology
gptkb:SK_Hynix
|
|
gptkbp:period
|
measured in nanoseconds
|
|
gptkbp:powerSource
|
lower than SRAM
|
|
gptkbp:replacedBy
|
magnetic core memory
|
|
gptkbp:requires
|
periodic refreshing
|
|
gptkbp:scalingLimitations
|
cell leakage
refresh overhead
|
|
gptkbp:standardizedBy
|
gptkb:JEDEC
|
|
gptkbp:storesDataAs
|
charge in capacitors
|
|
gptkbp:type
|
gptkb:volatile_memory
|
|
gptkbp:usedFor
|
gptkb:graphics_API
embedded systems
main memory in computers
|
|
gptkbp:usedIn
|
gptkb:industrial_equipment
personal computers
mobile devices
servers
game consoles
|
|
gptkbp:vulnerableTo
|
soft errors
data retention errors
row hammer effect
|
|
gptkbp:bfsParent
|
gptkb:processing-in-memory_(PIM)
|
|
gptkbp:bfsLayer
|
8
|
|
https://www.w3.org/2000/01/rdf-schema#label
|
DRAM technology
|