DRAM technology

GPTKB entity

Statements (52)
Predicate Object
gptkbp:instanceOf semiconductor memory technology
gptkbp:cellStructure one transistor and one capacitor
gptkbp:competitor gptkb:ReRAM
gptkb:SDRAM
gptkb:MRAM
SRAM
gptkbp:component gptkb:SDRAM
gptkb:HBM
gptkb:GDDR
gptkb:EDO_DRAM
gptkb:FPM_DRAM
gptkb:RDRAM
3D-stacked DRAM
Wide I/O DRAM
gptkbp:density measured in gigabits (Gb)
gptkbp:developedBy gptkb:IBM
gptkbp:fullName Dynamic Random-Access Memory technology
gptkbp:futureTrends lower power consumption
increased bandwidth
3D stacking
smaller process nodes
integration with logic chips
https://www.w3.org/2000/01/rdf-schema#label DRAM technology
gptkbp:introducedIn 1970
gptkbp:inventedBy gptkb:Robert_H._Dennard
gptkbp:manufacturer gptkb:Samsung_Electronics
gptkb:Micron_Technology
gptkb:Winbond
gptkb:Nanya_Technology
gptkb:SK_Hynix
gptkbp:period measured in nanoseconds
gptkbp:powerSource lower than SRAM
gptkbp:replacedBy magnetic core memory
gptkbp:requires periodic refreshing
gptkbp:scalingLimitations cell leakage
refresh overhead
gptkbp:standardizedBy gptkb:JEDEC
gptkbp:storesDataAs charge in capacitors
gptkbp:type volatile memory
gptkbp:usedFor embedded systems
graphics API
main memory in computers
gptkbp:usedIn industrial equipment
personal computers
mobile devices
servers
game consoles
gptkbp:vulnerableTo soft errors
data retention errors
row hammer effect
gptkbp:bfsParent gptkb:processing-in-memory_(PIM)
gptkbp:bfsLayer 6