Statements (53)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
transistor
|
| gptkbp:abbreviation |
gptkb:BJT
|
| gptkbp:application |
Oscillators
Analog circuits Digital circuits Signal modulation |
| gptkbp:category |
Semiconductor device
|
| gptkbp:feature |
Active region
Current-controlled device Cutoff region Reverse-active region Saturation region Three-layer structure |
| gptkbp:hasTerminal |
gptkb:Base
gptkb:Emitter gptkb:Collector |
| gptkbp:hasType |
gptkb:NPN
gptkb:PNP |
| https://www.w3.org/2000/01/rdf-schema#label |
Bipolar Junction Transistor
|
| gptkbp:introducedIn |
1947
|
| gptkbp:inventedBy |
gptkb:John_Bardeen
gptkb:Walter_Brattain gptkb:William_Shockley |
| gptkbp:material |
gptkb:Germanium
Silicon |
| gptkbp:operates |
Minority carrier injection
|
| gptkbp:relatedTo |
gptkb:battery
gptkb:microprocessor gptkb:Early_effect Switch Semiconductor physics Phototransistor Field Effect Transistor Electronic amplifier Base current Beta (β) Collector current Current gain Darlington transistor Discrete component Emitter current Heterojunction bipolar transistor Insulated-gate bipolar transistor Planar transistor Point-contact transistor Transistor–transistor logic Unijunction transistor |
| gptkbp:standardizedBy |
gptkb:JEDEC
|
| gptkbp:symbol |
gptkb:Q
|
| gptkbp:usedFor |
Amplification
Switching |
| gptkbp:bfsParent |
gptkb:transistor
|
| gptkbp:bfsLayer |
4
|