Statements (21)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
gptkb:flash_memory_technology
|
| gptkbp:cellType |
gptkb:QLC
gptkb:MLC gptkb:SLC gptkb:TLC |
| gptkbp:developedBy |
gptkb:Toshiba
gptkb:SanDisk |
| gptkbp:feature |
limited scalability
higher density than NOR flash limited endurance compared to 3D NAND lower cost per bit compared to NOR flash planar (2D) architecture single-layer cell structure |
| gptkbp:introducedIn |
1987
|
| gptkbp:replacedBy |
gptkb:3D_NAND
|
| gptkbp:usedIn |
solid-state drives
USB flash drives memory cards |
| gptkbp:bfsParent |
gptkb:V-NAND
|
| gptkbp:bfsLayer |
7
|
| https://www.w3.org/2000/01/rdf-schema#label |
planar NAND
|