Statements (32)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
transistor type
|
| gptkbp:abbreviation |
NMOS
nMOSFET |
| gptkbp:advantage |
faster switching speed
higher electron mobility higher static power consumption (in nMOS logic) |
| gptkbp:complement |
gptkb:pMOS
|
| gptkbp:controlledBy |
gate voltage
|
| gptkbp:fullName |
n-channel metal-oxide-semiconductor
|
| gptkbp:hasBodyTerminal |
body
|
| gptkbp:hasChannel |
n-type
|
| gptkbp:hasDrainTerminal |
drain
|
| gptkbp:hasGateTerminal |
gate
|
| gptkbp:hasSourceTerminal |
source
|
| gptkbp:historicalName |
early microprocessors
early memory chips |
| https://www.w3.org/2000/01/rdf-schema#label |
nMOS
|
| gptkbp:inventedBy |
1960s
|
| gptkbp:polarization |
n-type
|
| gptkbp:replacedBy |
gptkb:CMOS_technology
|
| gptkbp:turnsOffWhen |
gate voltage is zero or negative relative to source
|
| gptkbp:turnsOnWhen |
gate voltage is positive relative to source
|
| gptkbp:usedFor |
amplification
switching |
| gptkbp:usedIn |
gptkb:MOSFETs
gptkb:CMOS_technology digital circuits integrated circuits nMOS logic NMOS ICs |
| gptkbp:bfsParent |
gptkb:pMOS
|
| gptkbp:bfsLayer |
7
|