Statements (29)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
gptkb:chemical_compound
gptkb:microprocessor |
| gptkbp:alsoKnownAs |
gptkb:MCT
HgCdTe |
| gptkbp:bandGap |
narrow band gap
|
| gptkbp:bandGapEnergy |
tunable (0 to 1.5 eV depending on composition)
|
| gptkbp:category |
II-VI semiconductor
|
| gptkbp:chemicalFormula |
HgCdTe
|
| gptkbp:containsElement |
mercury
tellurium cadmium |
| gptkbp:crystalSystem |
gptkb:zinc_blende
|
| gptkbp:discoveredIn |
1950s
|
| gptkbp:grownBy |
gptkb:metalorganic_chemical_vapor_deposition
molecular beam epitaxy liquid phase epitaxy |
| https://www.w3.org/2000/01/rdf-schema#label |
mercury cadmium telluride
|
| gptkbp:meltingPoint |
~800°C
|
| gptkbp:sensitivity |
infrared radiation
|
| gptkbp:toxicity |
toxic
|
| gptkbp:usedFor |
spectroscopy
night vision devices missile guidance |
| gptkbp:usedIn |
gptkb:thermal_imaging
infrared astronomy infrared detectors focal plane arrays |
| gptkbp:bfsParent |
gptkb:HgCdTe_detector
|
| gptkbp:bfsLayer |
8
|