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gptkbp:instanceOf
|
patent
|
|
gptkbp:abstract
|
A method for producing high purity silicon using a chemical vapor deposition process.
|
|
gptkbp:applicationNumber
|
08/174,198
|
|
gptkbp:applicationType
|
utility
|
|
gptkbp:assignee
|
The_United_States_of_America_as_represented_by_the_Department_of_Energy
|
|
gptkbp:citedBy
|
gptkb:US_patent_5,800,000
gptkb:US_patent_5,500,000
gptkb:US_patent_5,900,000
gptkb:US_patent_5,700,000
gptkb:US_patent_5,600,000
|
|
gptkbp:classification
|
H01L 21/00
C01B 33/38
C23C 14/00
|
|
gptkbp:country
|
gptkb:United_States
|
|
gptkbp:expirationDate
|
April 5, 2011
|
|
gptkbp:fieldOfUse
|
semiconductors
|
|
https://www.w3.org/2000/01/rdf-schema#label
|
US patent 5,300,000
|
|
gptkbp:inventor
|
gptkb:Robert_J._McCarthy
|
|
gptkbp:issuedOn
|
April 5, 1994
|
|
gptkbp:legalStatus
|
active
|
|
gptkbp:numberOfClaims
|
20
|
|
gptkbp:patentCitation
|
gptkb:US_patent_4,500,000
gptkb:US_patent_7,500,000
gptkb:US_patent_5,200,000
gptkb:US_patent_6,600,000
gptkb:US_patent_7,300,000
gptkb:US_patent_6,100,000
gptkb:US_patent_5,800,000
gptkb:US_patent_7,700,000
gptkb:US_patent_5,400,000
gptkb:US_patent_5,900,000
gptkb:US_patent_6,000,000
gptkb:US_patent_5,000,000
gptkb:US_patent_6,700,000
gptkb:US_patent_6,300,000
gptkb:US_patent_8,000,000
gptkb:US_patent_5,100,000
gptkb:US_patent_6,900,000
gptkb:US_patent_5,700,000
gptkb:US_patent_6,800,000
gptkb:US_patent_6,400,000
gptkb:US_patent_7,000,000
gptkb:US_patent_7,400,000
gptkb:US_patent_4,900,000
gptkb:US_patent_6,200,000
gptkb:US_patent_6,500,000
gptkb:US_patent_7,800,000
gptkb:US_patent_7,200,000
gptkb:US_patent_5,600,000
gptkb:US_patent_7,900,000
gptkb:US_patent_4,600,000
gptkb:US_patent_7,600,000
gptkb:US_patent_4,800,000
gptkb:US_patent_7,100,000
US_patent_4,700,000
|
|
gptkbp:patentFamily
|
gptkb:US_patent_family_5,300,000
|
|
gptkbp:priorityDate
|
March 31, 1992
|
|
gptkbp:relatedTo
|
chemical vapor deposition
high purity materials
silicon production
|
|
gptkbp:title
|
Method for producing a high purity silicon
|