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gptkbp:instanceOf
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patent
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|
gptkbp:abstract
|
A method for producing high purity silicon.
|
|
gptkbp:applicationDate
|
January 30, 1991
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gptkbp:applicationNumber
|
07/646,155
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gptkbp:applicationType
|
non-provisional
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|
gptkbp:assignee
|
The_United_States_of_America_as_represented_by_the_Department_of_Energy
|
|
gptkbp:citedBy
|
gptkb:US_patent_5,123,456
|
|
gptkbp:classification
|
C01B 33/00
|
|
gptkbp:examiner
|
gptkb:John_Doe
|
|
gptkbp:fieldOfUse
|
semiconductors
|
|
gptkbp:grantDate
|
March 31, 1992
|
|
gptkbp:hasFieldOfUse
|
electronics
|
|
https://www.w3.org/2000/01/rdf-schema#label
|
US patent 5,100,000
|
|
gptkbp:internationalClassification
|
H01L 21/00
|
|
gptkbp:inventor
|
gptkb:Robert_J._McCarthy
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gptkbp:inventorCountry
|
gptkb:USA
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gptkbp:issuedOn
|
March 31, 1992
|
|
gptkbp:legalStatus
|
active
|
|
gptkbp:numberOfClaims
|
20
|
|
gptkbp:patentAbstract
|
A method for producing high purity silicon.
US_patent_5,100,001
|
|
gptkbp:patentAssignee
|
gptkb:The_United_States_of_America
|
|
gptkbp:patentCitation
|
gptkb:US_patent_4,999,999
|
|
gptkbp:patentClaim
|
A method for producing silicon.
|
|
gptkbp:patentClassification
|
C01B 33/00
Silicon Production
|
|
gptkbp:patentExpiration
|
March 31, 2012
|
|
gptkbp:patentFamily
|
US_patent_family_5,100,000
|
|
gptkbp:patentField
|
Material Science
|
|
gptkbp:patentFilingDate
|
January 30, 1991
March 31, 1992
|
|
gptkbp:patentInventor
|
gptkb:Robert_J._McCarthy
|
|
gptkbp:patentLength
|
20 years
|
|
gptkbp:patentNumber
|
5,100,000
|
|
gptkbp:patentOffice
|
gptkb:USPTO
|
|
gptkbp:patentOwner
|
gptkb:Department_of_Energy
|
|
gptkbp:patentStatus
|
Active
Granted
|
|
gptkbp:patentType
|
Utility Patent
utility
|
|
gptkbp:priorityDate
|
March 31, 1989
|
|
gptkbp:relatedPatent
|
gptkb:US_patent_5,200,000
|
|
gptkbp:relatedTo
|
silicon purification
|
|
gptkbp:status
|
granted
|
|
gptkbp:technology
|
chemical vapor deposition
|
|
gptkbp:title
|
Method for producing a high purity silicon
|