gptkbp:instanceOf
|
patent
|
gptkbp:hasAbstract
|
A method for producing a semiconductor device that improves efficiency.
|
gptkbp:hasApplicationNumber
|
10/123,456
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gptkbp:hasAssignee
|
gptkb:Tech_Innovations_LLC
|
gptkbp:hasCitations
|
gptkb:US_6,123,456
gptkb:US_6,234,567
gptkb:US_6,345,678
|
gptkbp:hasClaim
|
20
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gptkbp:hasCountry
|
gptkb:United_States
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gptkbp:hasDescription
|
This patent describes a novel method for enhancing semiconductor device performance.
|
gptkbp:hasExaminer
|
gptkb:Michael_Johnson
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gptkbp:hasFeature
|
Paid
|
gptkbp:hasFieldOfUse
|
semiconductors
Consumer_Electronics
|
gptkbp:hasFilingDate
|
2004-02-06
|
gptkbp:hasInternationalClassification
|
H01L
|
gptkbp:hasInventor
|
gptkb:John_Doe
gptkb:Alice_Brown
Jane_Smith
|
gptkbp:hasLegalStatus
|
Active
|
gptkbp:hasPatentNumber
|
6,789,830
|
gptkbp:hasPriorityDate
|
2004-09-14
2024-02-06
2003-02-06
|
gptkbp:hasPrograms
|
Cleaning
Etching
Testing
Deposition
Packaging
Lithography
Oxidation
Doping
Annealing
|
gptkbp:hasPublications
|
2004/0123456 A1
|
gptkbp:hasRelatedPatent
|
gptkb:Solar_Cells
Sensors
Telecommunications
Integrated Circuits
Optoelectronics
LEDs
Displays
Automotive_Electronics
Power_Devices
RF_Devices
|
gptkbp:hasTechnicalField
|
Electrical Engineering
|
gptkbp:hasTechnology
|
Improved thermal conductivity.
|
gptkbp:hasTitle
|
Method for producing a semiconductor device
|
gptkbp:hasTouristAttraction
|
gptkb:Silicon_Carbide
gptkb:Gallium_Nitride
Silicon
|
https://www.w3.org/2000/01/rdf-schema#label
|
US 6,789,830 C29
|
gptkbp:isFiledIn
|
gptkb:United_States
|
gptkbp:isPublishedIn
|
USPTO database
|
gptkbp:isRelatedTo
|
gptkb:US_6,789,831
US_6,789,829
|