Statements (52)
| Predicate | Object |
|---|---|
| gptkbp:instance_of |
gptkb:chemical_compound
|
| gptkbp:application |
defense and aerospace
power electronics high-temperature applications solar cells |
| gptkbp:associated_band |
3.0 e V
|
| gptkbp:average_temperature |
4.0 × 10⁻⁶/ K
|
| gptkbp:chemical_formula |
Si C
|
| gptkbp:color |
colorless
|
| gptkbp:composed_by |
chemical vapor deposition
Lely method reaction-bonded process Acheson process |
| gptkbp:cooling_system |
120 W/m· K
|
| gptkbp:difficulty |
9.2 on Mohs scale
|
| gptkbp:discovered_by |
gptkb:Edward_G._Acheson
|
| gptkbp:discovery_year |
1891
|
| gptkbp:dissolved |
insoluble in water
|
| gptkbp:environmental_impact |
low environmental impact
|
| https://www.w3.org/2000/01/rdf-schema#label |
Silicon Carbide
|
| gptkbp:is_visible_from |
transparent to infrared light
|
| gptkbp:market |
growing market in consumer electronics
growing market in electric vehicles growing market in renewable energy growing market in telecommunications |
| gptkbp:mass |
40.1 g/mol
|
| gptkbp:melting_point |
2700 ° C
3100 ° C |
| gptkbp:notable_conductors |
semiconducting
|
| gptkbp:occurs_in |
naturally occurring as moissanite
|
| gptkbp:piezoelectricity |
exhibits piezoelectric properties
|
| gptkbp:population_density |
3.21 g/cm³
|
| gptkbp:related_materials |
gptkb:aluminum_nitride
gptkb:Diamonds gptkb:Apple gallium nitride |
| gptkbp:research |
active research in high-frequency devices
active research in high-power devices active research in photonics active research in quantum computing |
| gptkbp:safety |
non-toxic
non-carcinogenic safe for industrial use stable under high temperatures |
| gptkbp:structure |
cubic
|
| gptkbp:toughness |
high toughness
|
| gptkbp:uses |
gptkb:LED
semiconductors abrasives |
| gptkbp:bfsParent |
gptkb:Wolfspeed,_Inc.
gptkb:Nex_Gen_Power_Systems |
| gptkbp:bfsLayer |
6
|