Properties (47)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
compound
|
| gptkbp:application |
5G technology
electric vehicles solar inverters satellite communications power amplifiers laser diodes |
| gptkbp:businessModel |
high
|
| gptkbp:chemicalFormula |
gptkb:GaN
|
| gptkbp:colors |
colorless
white when in bulk form |
| gptkbp:composedOf |
molecular beam epitaxy (MBE)
hydride_vapor_phase_epitaxy_(HVPE) metal-organic_chemical_vapor_deposition_(MOCVD) |
| gptkbp:constructionMaterial |
3.4 eV
|
| gptkbp:dissolved |
insoluble in water
soluble in acids soluble in bases |
| gptkbp:distribution |
6.15 g/cm³
|
| gptkbp:environmentalImpact |
recyclable
low toxicity semiconductor 130 W/m·K |
| gptkbp:hasFacilities |
83.73 g/mol
|
| https://www.w3.org/2000/01/rdf-schema#label |
Gallium Nitride
|
| gptkbp:iceClass |
2500 °C
5000 °C |
| gptkbp:market |
advancements in semiconductor technology
development of compact power supplies expansion in renewable energy applications growing adoption in consumer electronics increasing demand for efficient power devices |
| gptkbp:relatedPatent |
Aluminum_Gallium_Nitride_(AlGaN)
Gallium_Phosphide_(GaP) Indium_Gallium_Nitride_(InGaN) |
| gptkbp:releaseYear |
1970s
|
| gptkbp:researchAreas |
gptkb:quantum_computing
optical devices photonic devices high-power electronics |
| gptkbp:rootSystem |
wurtzite
zinc blende |
| gptkbp:safety |
stable under normal conditions
non-hazardous |
| gptkbp:uses |
LEDs
power electronics high-frequency devices |