Statements (33)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
semiconductor manufacturing process
|
| gptkbp:announced |
2022
|
| gptkbp:application |
high-performance computing
mobile devices |
| gptkbp:competitor |
gptkb:Intel_20A
Samsung 3nm GAA |
| gptkbp:density |
lower than N3
|
| gptkbp:developedBy |
gptkb:TSMC
|
| gptkbp:energyEfficiency |
higher than N3
|
| gptkbp:EUVLayers |
fewer than N3
|
| https://www.w3.org/2000/01/rdf-schema#label |
TSMC N3E (3nm)
|
| gptkbp:improves |
TSMC N5 (5nm)
higher than N3 |
| gptkbp:massProductionStart |
2023
|
| gptkbp:predecessor |
TSMC N3 (3nm)
|
| gptkbp:processor |
foundry process
|
| gptkbp:regionOfOrigin |
gptkb:Taiwan
|
| gptkbp:size |
3 nanometers
|
| gptkbp:successor |
TSMC N3P (3nm)
|
| gptkbp:targetAudience |
gptkb:Apple
gptkb:AMD gptkb:Qualcomm gptkb:NVIDIA |
| gptkbp:technology |
3nm
|
| gptkbp:transceiverType |
gptkb:FinFET
|
| gptkbp:usedIn |
gptkb:Apple_M4
gptkb:Apple_A17_Pro gptkb:Apple_M3 |
| gptkbp:waferSize |
300mm
|
| gptkbp:yield |
higher than N3
|
| gptkbp:bfsParent |
gptkb:Apple_A18
gptkb:Apple_M36 |
| gptkbp:bfsLayer |
7
|