Statements (23)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
gptkb:semiconductor_process_node
|
| gptkbp:announced |
2021
|
| gptkbp:competitor |
Samsung 2nm
TSMC N2 |
| gptkbp:developedBy |
gptkb:Intel
|
| gptkbp:expectedVolumeProduction |
2024
|
| gptkbp:features |
PowerVia
RibbonFET |
| gptkbp:firstToUse |
PowerVia
RibbonFET |
| gptkbp:locationOfFabs |
gptkb:Europe
gptkb:United_States |
| gptkbp:nodeNaming |
Angstrom Era
|
| gptkbp:predecessor |
gptkb:Intel_3
|
| gptkbp:processNode |
2 nanometers
|
| gptkbp:successor |
Intel 18A
|
| gptkbp:targetMarket |
high-performance computing
mobile devices |
| gptkbp:technology |
gptkb:CMOS
|
| gptkbp:transceiverType |
Gate-all-around (GAA)
|
| gptkbp:bfsParent |
gptkb:Arrow_Lake
|
| gptkbp:bfsLayer |
7
|
| https://www.w3.org/2000/01/rdf-schema#label |
Intel 20A
|