Statements (23)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
semiconductor manufacturing process
|
| gptkbp:densityImprovement |
up to 70% over N5
|
| gptkbp:designCompatibility |
not fully compatible with N3E
|
| gptkbp:developedBy |
gptkb:TSMC
|
| gptkbp:energyEfficiency |
higher than N5
|
| gptkbp:EUVLayers |
25
|
| gptkbp:finFETGeneration |
3rd generation
|
| https://www.w3.org/2000/01/rdf-schema#label |
TSMC N3B process
|
| gptkbp:improves |
10-15% over N5
|
| gptkbp:introducedIn |
2022
|
| gptkbp:market |
first 3nm process by TSMC
|
| gptkbp:massProductionStart |
late 2022
|
| gptkbp:notableClient |
gptkb:Apple
gptkb:AMD gptkb:Intel |
| gptkbp:predecessor |
gptkb:TSMC_N5_process
|
| gptkbp:size |
~3nm
|
| gptkbp:successor |
gptkb:TSMC_N3E_process
|
| gptkbp:technology |
3nm
|
| gptkbp:usedFor |
advanced logic chips
|
| gptkbp:yield |
lower than N3E
|
| gptkbp:bfsParent |
gptkb:Apple_A17_Pro
|
| gptkbp:bfsLayer |
6
|