Statements (22)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
gptkb:semiconductor_manufacturing_process
|
| gptkbp:application |
high-performance computing
smartphones |
| gptkbp:availableOn |
Q2 2020
|
| gptkbp:developedBy |
gptkb:TSMC
|
| gptkbp:finFETGeneration |
3rd generation
|
| gptkbp:firstProduced |
2020
|
| gptkbp:improvementOverN7 |
lower power consumption
higher performance higher transistor density |
| gptkbp:locationOfFirstProduction |
Fab 18, Tainan, Taiwan
|
| gptkbp:notableClient |
gptkb:Apple
gptkb:AMD gptkb:Qualcomm |
| gptkbp:predecessor |
TSMC N7 process
|
| gptkbp:successor |
TSMC N4 process
|
| gptkbp:technology |
5 nm
|
| gptkbp:transistorDensity |
~171 million transistors/mm²
|
| gptkbp:usesEUVLithography |
yes
|
| gptkbp:bfsParent |
gptkb:TSMC_4NP
|
| gptkbp:bfsLayer |
7
|
| https://www.w3.org/2000/01/rdf-schema#label |
TSMC N5 process
|