Statements (23)
Predicate | Object |
---|---|
gptkbp:instanceOf |
semiconductor manufacturing process
|
gptkbp:application |
high-performance computing
smartphones |
gptkbp:availableOn |
Q2 2020
|
gptkbp:developedBy |
gptkb:TSMC
|
gptkbp:finFETGeneration |
3rd generation
|
gptkbp:firstProduced |
2020
|
https://www.w3.org/2000/01/rdf-schema#label |
TSMC N5 process
|
gptkbp:improvementOverN7 |
lower power consumption
higher performance higher transistor density |
gptkbp:locationOfFirstProduction |
Fab 18, Tainan, Taiwan
|
gptkbp:notableClient |
gptkb:Apple
gptkb:AMD gptkb:Qualcomm |
gptkbp:predecessor |
TSMC N7 process
|
gptkbp:successor |
TSMC N4 process
|
gptkbp:technology |
5 nm
|
gptkbp:transistorDensity |
~171 million transistors/mm²
|
gptkbp:usesEUVLithography |
yes
|
gptkbp:bfsParent |
gptkb:TSMC_N3B_process
gptkb:TSMC_4NP |
gptkbp:bfsLayer |
7
|