TSMC 2nd-generation 3 nm (N3E)
GPTKB entity
Statements (22)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
semiconductor process node
|
| gptkbp:announced |
2022
|
| gptkbp:commercialUse |
gptkb:Apple
gptkb:AMD gptkb:NVIDIA |
| gptkbp:developedBy |
gptkb:TSMC
|
| gptkbp:feature |
lower power consumption
lower cost higher performance improved yield fewer EUV layers than N3 |
| https://www.w3.org/2000/01/rdf-schema#label |
TSMC 2nd-generation 3 nm (N3E)
|
| gptkbp:lithography |
gptkb:EUV
|
| gptkbp:massProductionStart |
2023
|
| gptkbp:predecessor |
TSMC 3 nm (N3)
|
| gptkbp:processNode |
3 nm
|
| gptkbp:successor |
TSMC 3 nm (N3P)
|
| gptkbp:targetMarket |
high-performance computing
mobile devices |
| gptkbp:transceiverType |
gptkb:FinFET
|
| gptkbp:bfsParent |
gptkb:Apple_M4
|
| gptkbp:bfsLayer |
6
|