Silicon-on-Insulator (SOI)
GPTKB entity
Properties (47)
Predicate | Object |
---|---|
gptkbp:instanceOf |
technology
|
gptkbp:allows |
thinner devices
|
gptkbp:appearsIn |
gptkb:CMOS_technology
high-speed circuits RF devices |
gptkbp:composedOf |
bulk silicon
insulating layer silicon layer |
gptkbp:developedBy |
1980s
|
gptkbp:enables |
lower power consumption
|
gptkbp:enhances |
thermal performance
|
gptkbp:hasContent |
bulk silicon
|
gptkbp:hasDepartment |
GaN technology
|
gptkbp:hasResearchInterest |
electrical engineering
material science nanotechnology |
https://www.w3.org/2000/01/rdf-schema#label |
Silicon-on-Insulator (SOI)
|
gptkbp:improves |
scalability
|
gptkbp:isAttendedBy |
universities
research institutions leading semiconductor companies |
gptkbp:isChallengedBy |
cost of production
material defects process complexity |
gptkbp:isEvaluatedBy |
performance metrics
scalability cost-effectiveness |
gptkbp:isFundedBy |
wafer bonding
SIMOX_process |
gptkbp:isKnownFor |
high yield
low leakage current high integration density |
gptkbp:isRelatedTo |
gptkb:SOI_CMOS
gptkb:MOSFET MEMS integrated circuits |
gptkbp:isUsedIn |
FPGA
microprocessors memory devices |
gptkbp:isVisitedBy |
high-performance applications
high-frequency applications low-voltage applications |
gptkbp:offers |
better isolation
|
gptkbp:provides |
better performance
|
gptkbp:reduces |
parasitic capacitance
cross-talk |
gptkbp:usedIn |
semiconductor manufacturing
|