Statements (23)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
aluminum alloy
semiconductor material |
| gptkbp:category |
group IV semiconductor
|
| gptkbp:composedOf |
silicon
germanium |
| gptkbp:crystalSystem |
diamond cubic
|
| gptkbp:discoveredIn |
1950s
|
| gptkbp:hasBandGap |
1.1 to 0.66 eV (depending on composition)
|
| gptkbp:hasLatticeConstant |
between silicon and germanium
|
| https://www.w3.org/2000/01/rdf-schema#label |
Silicon-germanium
|
| gptkbp:meltingPoint |
varies with composition
|
| gptkbp:symbol |
gptkb:SiGe
|
| gptkbp:usedFor |
spacecraft power systems
strained silicon technology thermoelectric devices |
| gptkbp:usedIn |
gptkb:CMOS_technology
integrated circuits photonic devices radio frequency applications high-speed electronics heterojunction bipolar transistors |
| gptkbp:bfsParent |
gptkb:Sg
|
| gptkbp:bfsLayer |
6
|