Properties (57)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
transistor
|
| gptkbp:application |
computers
electronics communication devices |
| gptkbp:characteristics |
phase shift
dynamic range linearity voltage control frequency response temperature sensitivity frequency response analysis thermal stability input impedance noise figure input-output relationship signal distortion output impedance thermal runaway power dissipation base current cut-off frequency saturation voltage gain bandwidth product load impedance common base configuration common collector configuration common emitter configuration beta (current gain) biasing techniques collector current current amplification early voltage emitter current large-signal model load line analysis small-signal model stability factors transit frequency hFE_(DC_current_gain) |
| gptkbp:developer |
semiconductor technology
|
| gptkbp:function |
switching
amplification |
| https://www.w3.org/2000/01/rdf-schema#label |
Shockley transistor
|
| gptkbp:impact |
modern electronics
|
| gptkbp:influencedBy |
vacuum tube technology
|
| gptkbp:inventor |
gptkb:William_Shockley
|
| gptkbp:marketSegment |
gptkb:Bell_Labs
|
| gptkbp:material |
silicon
germanium |
| gptkbp:patentNumber |
US2922016A
|
| gptkbp:relatedTo |
solid-state physics
transistor theory |
| gptkbp:replacedBy |
gptkb:MOSFET
|
| gptkbp:significance |
first commercially viable transistor
|
| gptkbp:successor |
junction transistor
|
| gptkbp:type |
gptkb:bipolar_junction_transistor
|
| gptkbp:yearEstablished |
1956
|