Properties (51)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
transistor
|
| gptkbp:composedOf |
semiconductor material
|
| gptkbp:hasCharacter |
temperature sensitivity
high output impedance high current gain low input impedance |
| gptkbp:hasCitations |
frequency response
thermal runaway saturation effects |
| gptkbp:hasFunction |
switching
amplification |
| gptkbp:hasRelatedPatent |
signal processing
amplifiers analog circuits oscillators digital circuits switching power supplies power regulation |
| gptkbp:hasType |
NPN
PNP |
| https://www.w3.org/2000/01/rdf-schema#label |
bipolar junction transistor
|
| gptkbp:isChallengedBy |
gptkb:MOSFET
|
| gptkbp:isCharacterizedBy |
thermal resistance
cut-off frequency current amplification factor maximum collector current maximum collector-emitter voltage |
| gptkbp:isFundedBy |
semiconductor companies
|
| gptkbp:isMonitoredBy |
gptkb:Walter_Brattain
gptkb:William_Shockley gptkb:John_Bardeen |
| gptkbp:isPartOf |
electronic circuits
integrated circuits discrete components |
| gptkbp:isTrainedIn |
gptkb:oscilloscope
multimeter curve tracer |
| gptkbp:isUsedFor |
RF applications
digital applications linear_applications |
| gptkbp:isUsedIn |
telecommunications
automotive applications computers consumer electronics industrial equipment |
| gptkbp:isVisitedBy |
1948
|
| gptkbp:operatesIn |
current
|
| gptkbp:region |
base
collector emitter |
| gptkbp:uses |
biasing
|