Secondary Ion Mass Spectrometry
GPTKB entity
Statements (50)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
analytical technique
|
| gptkbp:abbreviation |
gptkb:SIMS
|
| gptkbp:analyzes |
metals
semiconductors minerals polymers solids thin films biological samples mass-to-charge ratio |
| gptkbp:citation |
Benninghoven, Rüdenauer, Werner: Secondary Ion Mass Spectrometry: Basic Concepts, Instrumental Aspects, Applications and Trends (1987)
|
| gptkbp:detects |
secondary ions
|
| gptkbp:developedBy |
1960s
|
| gptkbp:enables |
depth profiling
surface imaging isotope ratio measurement |
| https://www.w3.org/2000/01/rdf-schema#label |
Secondary Ion Mass Spectrometry
|
| gptkbp:inventedBy |
gptkb:Benninghoven
|
| gptkbp:limitation |
matrix effects
destructive analysis |
| gptkbp:primaryIons |
O2+
Ar+ Au+ Bi+ C60+ Cs+ Ga+ |
| gptkbp:principle |
bombardment of sample with primary ions
|
| gptkbp:provides |
high sensitivity
high spatial resolution |
| gptkbp:relatedTo |
gptkb:X-ray_Photoelectron_Spectroscopy
gptkb:Auger_Electron_Spectroscopy Time-of-Flight SIMS |
| gptkbp:requires |
vacuum environment
|
| gptkbp:type |
dynamic SIMS
static SIMS |
| gptkbp:usedFor |
surface analysis
elemental analysis isotopic analysis chemical mapping |
| gptkbp:usedIn |
biology
geology materials science semiconductor industry |
| gptkbp:uses |
detector
spectrometer vacuum chamber primary ion beam |
| gptkbp:bfsParent |
gptkb:X-ray_Photoelectron_Spectroscopy
|
| gptkbp:bfsLayer |
7
|