Scanning Tunneling Microscopy
GPTKB entity
Statements (49)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
analytical technique
|
| gptkbp:abbreviation |
gptkb:STM
|
| gptkbp:application |
surface analysis
imaging surfaces at atomic level manipulation of atoms |
| gptkbp:detects |
local density of states
tunneling current |
| gptkbp:enables |
atomic manipulation
molecular manipulation atomic resolution imaging spectroscopy at atomic scale visualization of individual atoms |
| gptkbp:field |
gptkb:nanotechnology
surface science |
| gptkbp:firstImage |
silicon surface
|
| https://www.w3.org/2000/01/rdf-schema#label |
Scanning Tunneling Microscopy
|
| gptkbp:introducedIn |
1981
|
| gptkbp:inventedBy |
gptkb:Gerd_Binnig
gptkb:Heinrich_Rohrer |
| gptkbp:isManipulatedBy |
single atoms
single molecules |
| gptkbp:limitation |
sensitive to vibrations
requires clean surfaces requires conductive samples |
| gptkbp:measures |
surface topography
|
| gptkbp:NobelPrizeYear |
gptkb:Nobel_Prize_in_Physics_1986
|
| gptkbp:operatesIn |
ultra-high vacuum
ambient conditions liquid environments |
| gptkbp:principle |
quantum tunneling
|
| gptkbp:relatedTo |
gptkb:Atomic_Force_Microscopy
gptkb:Scanning_Probe_Microscopy |
| gptkbp:requires |
conductive or semiconductive samples
|
| gptkbp:resolution |
atomic scale
|
| gptkbp:signature |
metals
semiconductors adsorbed atoms molecules on surfaces |
| gptkbp:usedIn |
biology
chemistry electronics materials science physics |
| gptkbp:uses |
feedback loop
bias voltage piezoelectric scanner sharp metallic tip |
| gptkbp:bfsParent |
gptkb:Near-field_Scanning_Optical_Microscopy
|
| gptkbp:bfsLayer |
6
|