Scanning Tunneling Microscope
GPTKB entity
Statements (52)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
scientific instrument
|
| gptkbp:abbreviation |
gptkb:STM
|
| gptkbp:awarded |
gptkb:Nobel_Prize_in_Physics_1986
|
| gptkbp:category |
gptkb:electron_microscope
scanning probe microscope |
| gptkbp:commercializedSince |
1980s
|
| gptkbp:enables |
surface analysis
nanofabrication atomic manipulation |
| gptkbp:feedbackMechanism |
constant current mode
constant height mode |
| gptkbp:field |
gptkb:nanotechnology
materials science physics surface science |
| gptkbp:firstImage |
silicon surface
|
| gptkbp:function |
imaging surfaces at atomic level
|
| https://www.w3.org/2000/01/rdf-schema#label |
Scanning Tunneling Microscope
|
| gptkbp:influenced |
development of atomic force microscopy
development of nanotechnology |
| gptkbp:introducedIn |
1981
|
| gptkbp:inventedBy |
gptkb:Gerd_Binnig
gptkb:Heinrich_Rohrer |
| gptkbp:measures |
tunneling current
|
| gptkbp:NobelPrizeYear |
gptkb:Gerd_Binnig
gptkb:Heinrich_Rohrer |
| gptkbp:notableFor |
IBM logo written with xenon atoms
|
| gptkbp:operatesIn |
ultra-high vacuum
ambient conditions cryogenic temperatures |
| gptkbp:patent |
1982
|
| gptkbp:principle |
quantum tunneling
|
| gptkbp:relatedTo |
gptkb:Atomic_Force_Microscope
Electron Microscope |
| gptkbp:requires |
precise control electronics
vibration isolation sharp tip conductive sample |
| gptkbp:resolution |
atomic
0.001 nm vertical 0.01 nm lateral |
| gptkbp:scanningMethod |
raster scan
|
| gptkbp:signature |
electronic structure image
topographic image |
| gptkbp:tipMaterial |
tungsten
platinum-iridium |
| gptkbp:uses |
manipulating atoms
mapping surface structure measuring electronic properties |
| gptkbp:bfsParent |
gptkb:Atoms
gptkb:Atomic_Force_Microscope |
| gptkbp:bfsLayer |
7
|