Statements (24)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
semiconductor manufacturing process
|
| gptkbp:announced |
2019
|
| gptkbp:competitor |
gptkb:TSMC_5nm
|
| gptkbp:densityImprovement |
up to 25% over 7nm
|
| gptkbp:developedBy |
gptkb:Samsung_Electronics
|
| https://www.w3.org/2000/01/rdf-schema#label |
Samsung 5nm
|
| gptkbp:improves |
10% over 7nm
|
| gptkbp:locationOfFabs |
gptkb:Hwaseong,_South_Korea
gptkb:Pyeongtaek,_South_Korea |
| gptkbp:massProductionStart |
2020
|
| gptkbp:powerEfficiencyImprovement |
20% over 7nm
|
| gptkbp:predecessor |
Samsung 7nm
|
| gptkbp:size |
5 nm
|
| gptkbp:successor |
Samsung 4nm
|
| gptkbp:technology |
5 nanometer
|
| gptkbp:transceiverType |
gptkb:FinFET
|
| gptkbp:usedFor |
integrated circuits
|
| gptkbp:usedIn |
AI chips
mobile processors automotive chips |
| gptkbp:uses |
EUV lithography
|
| gptkbp:bfsParent |
gptkb:Intel_4
gptkb:N5_(TSMC_5nm) |
| gptkbp:bfsLayer |
6
|