Statements (20)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
gptkb:microprocessor
|
| gptkbp:composedOf |
high dielectric constant material
metal gate electrode |
| gptkbp:enables |
gptkb:Moore's_Law_scaling
lower power consumption smaller transistor sizes |
| gptkbp:example |
hafnium oxide
|
| https://www.w3.org/2000/01/rdf-schema#label |
high-k metal gate
|
| gptkbp:improves |
device performance
|
| gptkbp:introduced |
gptkb:Intel
|
| gptkbp:introducedIn |
2007
|
| gptkbp:reduces |
gate leakage current
|
| gptkbp:replacedBy |
silicon dioxide gate dielectric
|
| gptkbp:usedBy |
gptkb:Samsung_Electronics
gptkb:TSMC gptkb:GlobalFoundries |
| gptkbp:usedIn |
45nm process technology
CMOS transistors |
| gptkbp:bfsParent |
gptkb:IBM_Microelectronics
|
| gptkbp:bfsLayer |
6
|