Statements (19)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
semiconductor manufacturing process
|
| gptkbp:application |
gptkb:CMOS_technology
microelectronics |
| gptkbp:developedBy |
gptkb:IBM
|
| gptkbp:enables |
lower power consumption
reduced parasitic capacitance higher speed integrated circuits improved device performance |
| https://www.w3.org/2000/01/rdf-schema#label |
SIMOX
|
| gptkbp:processor |
ion implantation
thermal annealing |
| gptkbp:purpose |
to create a buried oxide layer in silicon wafers
|
| gptkbp:relatedTo |
SOI technology
smart cut process |
| gptkbp:standsFor |
Separation by IMplanted OXygen
|
| gptkbp:usedIn |
silicon-on-insulator (SOI) wafer production
|
| gptkbp:bfsParent |
gptkb:SOI_(Silicon_on_Insulator)
gptkb:Silicon_on_Insulator |
| gptkbp:bfsLayer |
7
|