Next Generation Lithography (NGL)
GPTKB entity
Statements (24)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
lithography technology
|
| gptkbp:alternativeTo |
gptkb:deep_ultraviolet_lithography_(DUV)
|
| gptkbp:challenge |
cost
complexity resist materials tool availability |
| gptkbp:constructionStartYear |
1990s
|
| gptkbp:enables |
Moore's Law continuation
advanced integrated circuits |
| gptkbp:field |
semiconductor manufacturing
|
| gptkbp:goal |
enable sub-10 nm feature sizes
|
| https://www.w3.org/2000/01/rdf-schema#label |
Next Generation Lithography (NGL)
|
| gptkbp:includes |
gptkb:extreme_ultraviolet_lithography_(EUV)
electron beam lithography X-ray lithography ion beam lithography |
| gptkbp:mainSupplier |
ASML (for EUV)
|
| gptkbp:purpose |
patterning smaller features on semiconductor wafers
|
| gptkbp:replacedBy |
optical lithography at smaller nodes
|
| gptkbp:status |
partially adopted (as of 2024)
|
| gptkbp:technology |
EUV lithography
|
| gptkbp:usedBy |
semiconductor industry
|
| gptkbp:bfsParent |
gptkb:SEMATECH
|
| gptkbp:bfsLayer |
8
|