Statements (18)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
gptkb:microprocessor
gptkb:random-access_memory |
| gptkbp:component |
gptkb:metal–oxide–semiconductor_field-effect_transistor
|
| gptkbp:developedBy |
gptkb:Simon_Min_Sze
gptkb:Dawon_Kahng |
| gptkbp:enables |
higher memory density
faster memory access |
| gptkbp:introducedIn |
1960s
|
| gptkbp:predecessor |
gptkb:magnetic-core_memory
|
| gptkbp:technology |
gptkb:battery
|
| gptkbp:type |
gptkb:static_RAM
gptkb:volatile_memory dynamic RAM |
| gptkbp:usedIn |
microprocessors
computers |
| gptkbp:bfsParent |
gptkb:DEC_VAX-11/780
|
| gptkbp:bfsLayer |
7
|
| https://www.w3.org/2000/01/rdf-schema#label |
MOS RAM
|