Statements (33)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
gptkb:microprocessor
|
| gptkbp:abbreviation |
gptkb:LDMOS
|
| gptkbp:advantage |
high efficiency
ruggedness ease of integration higher on-resistance than VDMOS lower voltage capability than VDMOS |
| gptkbp:application |
cellular infrastructure
broadcast transmitters industrial RF applications wireless base stations |
| gptkbp:category |
transistor
|
| gptkbp:developedBy |
gptkb:RCA
|
| gptkbp:feature |
high-frequency operation
low on-resistance high breakdown voltage lateral current flow |
| https://www.w3.org/2000/01/rdf-schema#label |
Lateral Diffused MOSFET
|
| gptkbp:introducedIn |
1970s
|
| gptkbp:material |
silicon
silicon carbide |
| gptkbp:relatedTo |
gptkb:battery
gptkb:DMOS gptkb:vertical_diffused_MOSFET |
| gptkbp:structure |
diffused drain and source regions
lateral channel |
| gptkbp:technology |
gptkb:battery
|
| gptkbp:usedIn |
automotive electronics
switching power supplies RF power amplifiers audio power amplifiers |
| gptkbp:bfsParent |
gptkb:LDE
|
| gptkbp:bfsLayer |
7
|