Statements (29)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
transistor
|
| gptkbp:application |
telecommunications
industrial RF applications medical RF applications |
| gptkbp:contrastsWith |
transistor
GaN transistor |
| gptkbp:developedBy |
gptkb:Motorola
|
| gptkbp:feature |
high power handling
high efficiency ruggedness high linearity low on-resistance high breakdown voltage diffused channel lateral structure suitable for high-current operation suitable for high-frequency operation suitable for high-voltage operation |
| gptkbp:fullName |
Laterally Diffused Metal-Oxide-Semiconductor
|
| https://www.w3.org/2000/01/rdf-schema#label |
LDMOS
|
| gptkbp:material |
silicon
|
| gptkbp:technology |
gptkb:battery
|
| gptkbp:usedIn |
wireless infrastructure
cellular base stations broadcast transmitters RF power amplifiers audio power amplifiers |
| gptkbp:bfsParent |
gptkb:Infineon_RF_Power_business_(2018)
|
| gptkbp:bfsLayer |
7
|