Statements (32)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
gptkb:SDRAM
gptkb:electronic_storage_medium |
| gptkbp:advantage |
low power consumption
no moving parts fast read access |
| gptkbp:canBeErased |
electrically
|
| gptkbp:canBeReprogrammed |
electrically
|
| gptkbp:erasedIn |
blocks
|
| gptkbp:hasType |
gptkb:NAND_flash
gptkb:NOR_flash |
| gptkbp:introducedIn |
1980
|
| gptkbp:inventedBy |
gptkb:Fujio_Masuoka
gptkb:Toshiba |
| gptkbp:limitation |
block-level erasure
limited write/erase cycles |
| gptkbp:relatedTo |
gptkb:EEPROM
|
| gptkbp:replacedBy |
magnetic storage in some applications
|
| gptkbp:standardizedBy |
gptkb:JEDEC
|
| gptkbp:storage |
electronically
|
| gptkbp:subclassOf |
gptkb:EEPROM
|
| gptkbp:usedFor |
data storage
solid-state drives USB flash drives removable memory cards firmware storage |
| gptkbp:usedIn |
embedded systems
computers digital cameras mobile phones |
| gptkbp:bfsParent |
gptkb:AT29C_series
|
| gptkbp:bfsLayer |
7
|
| https://www.w3.org/2000/01/rdf-schema#label |
Flash EEPROM
|