Statements (47)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
thin film deposition technique
epitaxy method |
| gptkbp:abbreviation |
gptkb:MBE
|
| gptkbp:advantage |
low defect density
precise control of composition sharp interfaces |
| gptkbp:category |
gptkb:nanotechnology
surface science semiconductor fabrication |
| gptkbp:controlledBy |
shutters
|
| gptkbp:enables |
high purity films
atomic layer control precise doping profiles |
| gptkbp:field |
materials science
semiconductor physics |
| https://www.w3.org/2000/01/rdf-schema#label |
Molecular beam epitaxy
|
| gptkbp:inventedBy |
gptkb:Alfred_Y._Cho
gptkb:John_R._Arthur 1968 |
| gptkbp:limitation |
high cost
slow growth rate limited scalability |
| gptkbp:monitors |
reflection high-energy electron diffraction
|
| gptkbp:operatesIn |
ultra-high vacuum
|
| gptkbp:relatedTo |
chemical vapor deposition
liquid phase epitaxy molecular beam epitaxial growth |
| gptkbp:substrate |
gptkb:indium_phosphide
gptkb:gallium_arsenide silicon |
| gptkbp:usedFor |
heterostructures
superlattices quantum well structures fabrication of semiconductor devices growing crystalline layers |
| gptkbp:usedIn |
optoelectronics
photodetectors research and development nanostructures spintronics laser diodes high electron mobility transistors quantum cascade lasers |
| gptkbp:uses |
molecular beams
heated effusion cells |
| gptkbp:bfsParent |
gptkb:Reflection_high-energy_electron_diffraction
|
| gptkbp:bfsLayer |
7
|