Statements (38)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
crystal growth method
|
| gptkbp:alternativeTo |
gptkb:Bridgman–Stockbarger_technique
gptkb:float-zone_process |
| gptkbp:category |
crystallography
materials science Process semiconductor fabrication |
| gptkbp:diameter |
200 mm
450 mm 300 mm |
| https://www.w3.org/2000/01/rdf-schema#label |
Czochralski process
|
| gptkbp:introducedIn |
1916
|
| gptkbp:inventedBy |
gptkb:Jan_Czochralski
|
| gptkbp:material |
gptkb:gallium_arsenide
quartz silicon germanium |
| gptkbp:namedAfter |
gptkb:Jan_Czochralski
|
| gptkbp:output |
boule
monocrystalline silicon single crystal rod |
| gptkbp:processor |
pulling method
|
| gptkbp:requires |
precise temperature control
high purity raw materials |
| gptkbp:result |
single crystal ingot
|
| gptkbp:step |
dipping seed crystal
melting raw material in crucible rotating seed crystal slowly pulling seed crystal upward |
| gptkbp:usedFor |
semiconductor manufacturing
gallium arsenide crystal growth germanium crystal growth growing single crystals silicon wafer production |
| gptkbp:usedIn |
electronics industry
solar cell manufacturing |
| gptkbp:bfsParent |
gptkb:Jan_Czochralski
|
| gptkbp:bfsLayer |
6
|