Statements (22)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
crystal growth technique
|
| gptkbp:advantage |
produces silicon with fewer impurities
|
| gptkbp:alternativeTo |
gptkb:Czochralski_process
|
| gptkbp:compatibleWith |
crucible
|
| https://www.w3.org/2000/01/rdf-schema#label |
float-zone process
|
| gptkbp:inventedBy |
1952
Henry Theurer |
| gptkbp:method |
zone melting
|
| gptkbp:process_involves |
moving molten zone along silicon rod
|
| gptkbp:produces |
high-resistivity silicon
single crystal silicon |
| gptkbp:reduces |
oxygen contamination
|
| gptkbp:requires |
high-purity starting material
|
| gptkbp:used_in |
semiconductor industry
|
| gptkbp:usedFor |
power electronics
solar cell manufacturing germanium purification production of high-purity silicon crystals purification of silicon |
| gptkbp:bfsParent |
gptkb:Czochralski_process
gptkb:Commercial_Float_Zone_Furnace_(CFZF) |
| gptkbp:bfsLayer |
7
|