Statements (30)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
detector
Semiconductor device |
| gptkbp:advantage |
High sensitivity
Higher noise Requires high voltage |
| gptkbp:category |
gptkb:Optoelectronics
|
| gptkbp:detects |
Light
Photons |
| gptkbp:discoveredIn |
1960s
|
| gptkbp:foundIn |
gptkb:Fiber_optic_receivers
Laser rangefinders Medical imaging LIDAR systems |
| gptkbp:hasComponent |
gptkb:p-n_junction
Depletion region |
| gptkbp:hasGain |
Internal gain
|
| https://www.w3.org/2000/01/rdf-schema#label |
Avalanche photodiode
|
| gptkbp:material |
gptkb:Germanium
gptkb:Indium_gallium_arsenide Silicon |
| gptkbp:operates |
Avalanche multiplication
|
| gptkbp:relatedTo |
gptkb:PIN_photodiode
Photomultiplier tube |
| gptkbp:requires |
Reverse bias voltage
|
| gptkbp:sensitivity |
Visible light
Infrared light |
| gptkbp:usedFor |
Optical communication
Photon detection |
| gptkbp:bfsParent |
gptkb:Photodiode
|
| gptkbp:bfsLayer |
7
|