Statements (31)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
etching technique
|
| gptkbp:abbreviation |
gptkb:ALE
|
| gptkbp:advantage |
low damage
atomic-scale precision high selectivity |
| gptkbp:appliesTo |
gptkb:III-V_semiconductors
metals silicon dielectrics |
| gptkbp:category |
gptkb:nanotechnology
surface engineering dry etching |
| gptkbp:enables |
atomic-level control
high aspect ratio structures |
| gptkbp:firstDemonstrated |
1990s
|
| https://www.w3.org/2000/01/rdf-schema#label |
Atomic Layer Etching
|
| gptkbp:processor |
cyclic process
|
| gptkbp:relatedTo |
gptkb:Atomic_Layer_Deposition
|
| gptkbp:requires |
gptkb:plasma
precursor gases reactive species |
| gptkbp:step |
adsorption
surface modification desorption removal step |
| gptkbp:usedFor |
atomic-scale etching
precise material removal |
| gptkbp:usedIn |
semiconductor manufacturing
nanofabrication |
| gptkbp:bfsParent |
gptkb:ALE
|
| gptkbp:bfsLayer |
6
|