Statements (23)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
semiconductor material
|
| gptkbp:alternativeName |
gptkb:aluminum_gallium_indium_phosphide
|
| gptkbp:bandGap |
direct
|
| gptkbp:bandGapEnergy |
1.9–2.3 eV
|
| gptkbp:category |
gptkb:III-V_semiconductor
|
| gptkbp:chemicalFormula |
AlxGayIn1-x-yP
|
| gptkbp:colorEmissionRange |
gptkb:orange
green red yellow |
| gptkbp:containsElement |
gptkb:phosphorus
gptkb:gallium aluminum indium |
| gptkbp:crystalSystem |
gptkb:zinc_blende
|
| gptkbp:growthMethod |
molecular beam epitaxy
metalorganic vapor phase epitaxy |
| https://www.w3.org/2000/01/rdf-schema#label |
AlGaInP
|
| gptkbp:usedIn |
optoelectronics
laser diodes light-emitting diodes |
| gptkbp:bfsParent |
gptkb:aluminum_gallium_indium_phosphide
|
| gptkbp:bfsLayer |
6
|