Statements (20)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
PNP bipolar junction transistor
|
| gptkbp:application |
general purpose
|
| gptkbp:complementary_to |
gptkb:2N2222
|
| gptkbp:gain_(hFE) |
100 (typical)
|
| https://www.w3.org/2000/01/rdf-schema#label |
2N2907
|
| gptkbp:introduced |
1960s
|
| gptkbp:lead_arrangement |
E-B-C (from flat side)
|
| gptkbp:manufacturer |
various manufacturers
|
| gptkbp:maximum_collector_current |
600 mA
|
| gptkbp:maximum_collector-base_voltage |
60 V
|
| gptkbp:maximum_collector-emitter_voltage |
40 V
|
| gptkbp:maximum_power_dissipation |
400 mW
|
| gptkbp:maximum_transition_frequency |
200 MHz
|
| gptkbp:polarization |
gptkb:PNP
|
| gptkbp:type |
gptkb:TO-18
transistor |
| gptkbp:usedFor |
amplification
switching |
| gptkbp:bfsParent |
gptkb:2N2222
|
| gptkbp:bfsLayer |
8
|