Statements (24)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
NPN bipolar junction transistor
|
| gptkbp:basisFor |
silicon
|
| gptkbp:category |
transistor
|
| gptkbp:complement |
gptkb:2N2907
|
| gptkbp:gainBandwidthProduct |
250 MHz
|
| https://www.w3.org/2000/01/rdf-schema#label |
2N2222
|
| gptkbp:introducedIn |
1962
|
| gptkbp:manufacturer |
gptkb:Fairchild_Semiconductor
gptkb:Texas_Instruments gptkb:ON_Semiconductor |
| gptkbp:maximumCollectorCurrent |
800 mA
|
| gptkbp:maximumCollectorEmitterVoltage |
40 V
|
| gptkbp:maximumPowerDissipation |
500 mW
|
| gptkbp:pinCount |
3
|
| gptkbp:standardNumber |
gptkb:JEDEC_2N2222
|
| gptkbp:symbol |
gptkb:Q
|
| gptkbp:type |
gptkb:TO-18
through-hole TO-92 |
| gptkbp:usedFor |
switching applications
general purpose low-power amplifying |
| gptkbp:bfsParent |
gptkb:2N
gptkb:TO-18 |
| gptkbp:bfsLayer |
7
|