scanning tunneling microscopy
GPTKB entity
Statements (50)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
analytical technique
|
| gptkbp:abbreviation |
gptkb:STM
|
| gptkbp:awarded |
gptkb:Nobel_Prize_in_Physics_1986
|
| gptkbp:canOperateAt |
room temperature
cryogenic temperatures |
| gptkbp:enables |
manipulation of individual atoms
surface spectroscopy |
| gptkbp:field |
gptkb:nanotechnology
condensed matter physics materials science surface science |
| gptkbp:firstDemonstrated |
gptkb:IBM_Zurich_Research_Laboratory
|
| gptkbp:hasApplication |
gptkb:molecular_electronics
surface chemistry semiconductor research superconductivity research catalysis research atomic manipulation adsorption studies graphene studies magnetism research molecular manipulation nanostructure fabrication quantum dot studies surface reconstruction studies thin film analysis |
| https://www.w3.org/2000/01/rdf-schema#label |
scanning tunneling microscopy
|
| gptkbp:introducedIn |
1981
|
| gptkbp:inventedBy |
gptkb:Gerd_Binnig
gptkb:Heinrich_Rohrer |
| gptkbp:measures |
local density of states
tunneling current |
| gptkbp:mode |
constant current mode
constant height mode |
| gptkbp:notableFor |
manipulated xenon atoms spelling IBM
silicon surface atoms |
| gptkbp:operatesIn |
ambient air
ultra-high vacuum liquid environments |
| gptkbp:relatedTo |
gptkb:atomic_force_microscopy
electron microscopy |
| gptkbp:requires |
precise control electronics
sharp conducting tip vibration isolation |
| gptkbp:resolution |
atomic scale
|
| gptkbp:signature |
conductive materials
|
| gptkbp:usedFor |
imaging surfaces at atomic level
|
| gptkbp:uses |
quantum tunneling
|
| gptkbp:bfsParent |
gptkb:Molecular_Electronics
|
| gptkbp:bfsLayer |
4
|