Statements (24)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
gptkb:flash_memory_technology
|
| gptkbp:alsoKnownAs |
gptkb:3D_NAND
|
| gptkbp:announced |
2013
|
| gptkbp:application |
gptkb:consumer_electronics
enterprise storage |
| gptkbp:cellType |
gptkb:QLC
gptkb:MLC gptkb:TLC |
| gptkbp:contrastsWith |
gptkb:planar_NAND
|
| gptkbp:developedBy |
gptkb:Samsung_Electronics
|
| gptkbp:feature |
lower power consumption
faster data transfer higher storage density improved endurance vertical stacking of memory cells |
| gptkbp:marketedAs |
gptkb:Samsung
|
| gptkbp:technology |
gptkb:SDRAM
|
| gptkbp:usedIn |
embedded systems
solid-state drives memory cards |
| gptkbp:bfsParent |
gptkb:Samsung_SSD
gptkb:Samsung_Semiconductor |
| gptkbp:bfsLayer |
6
|
| https://www.w3.org/2000/01/rdf-schema#label |
V-NAND
|