magnetic random-access memory
GPTKB entity
Statements (35)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
gptkb:SDRAM
|
| gptkbp:abbreviation |
gptkb:MRAM
|
| gptkbp:advantage |
endurance
high speed non-volatility |
| gptkbp:alternativeTo |
gptkb:SDRAM
gptkb:EEPROM SRAM |
| gptkbp:application |
embedded systems
cache memory storage devices |
| gptkbp:category |
gptkb:personal_computer
spintronics emerging memory technology |
| gptkbp:contrastsWith |
gptkb:SDRAM
SRAM |
| gptkbp:dataRetention |
years
|
| gptkbp:developedBy |
gptkb:IBM
gptkb:Honeywell gptkb:Everspin_Technologies 1990s |
| https://www.w3.org/2000/01/rdf-schema#label |
magnetic random-access memory
|
| gptkbp:marketedAs |
gptkb:Samsung
gptkb:GlobalFoundries gptkb:Everspin_Technologies |
| gptkbp:powerSource |
low
|
| gptkbp:read_speed |
nanoseconds
|
| gptkbp:stores_data_by |
magnetic states
|
| gptkbp:type |
spintronic memory
|
| gptkbp:uses |
magnetoresistance
magnetic tunnel junction spin-transfer torque |
| gptkbp:write_speed |
nanoseconds
|
| gptkbp:bfsParent |
gptkb:Spintronics
|
| gptkbp:bfsLayer |
7
|