Statements (31)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
physical phenomenon
|
| gptkbp:cause |
open circuits
reliability issues in microelectronics short circuits void formation |
| gptkbp:defines |
the transport of material caused by the gradual movement of the ions in a conductor due to the momentum transfer between conducting electrons and diffusing metal atoms
|
| gptkbp:field |
electronics
materials science |
| gptkbp:firstObserved |
1960s
|
| https://www.w3.org/2000/01/rdf-schema#label |
electromigration
|
| gptkbp:influencedBy |
gptkb:temperature
material properties current density geometry of conductor grain structure |
| gptkbp:measures |
mean time to failure (MTTF)
|
| gptkbp:mitigatedBy |
using barrier layers
using materials with higher melting points using wider interconnects |
| gptkbp:occurredIn |
integrated circuits
metal interconnects |
| gptkbp:relatedTo |
gptkb:Black's_equation
diffusion semiconductor industry reliability engineering VLSI design aluminum interconnects copper interconnects failure analysis |
| gptkbp:bfsParent |
gptkb:molecular_electronics
|
| gptkbp:bfsLayer |
5
|