Statements (27)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
gptkb:microprocessor
Material |
| gptkbp:advantage |
low-cost production
flexibility in deposition instability under prolonged illumination lower efficiency in devices |
| gptkbp:canBeDoped |
yes
|
| gptkbp:discoveredIn |
1970s
|
| gptkbp:example |
gptkb:amorphous_germanium
gptkb:amorphous_silicon |
| gptkbp:hasBandGap |
wider than crystalline counterpart
|
| gptkbp:hasProperty |
lower carrier mobility than crystalline semiconductors
lack of long-range order higher defect density than crystalline semiconductors |
| https://www.w3.org/2000/01/rdf-schema#label |
amorphous semiconductors
|
| gptkbp:preparedBy |
gptkb:physical_vapor_deposition
chemical vapor deposition sputtering |
| gptkbp:structure |
non-crystalline
|
| gptkbp:usedIn |
gptkb:liquid_crystal_displays
gptkb:thin-film_transistors photodetectors solar cells X-ray detectors |
| gptkbp:bfsParent |
gptkb:Conduction_in_Non-Crystalline_Materials
gptkb:Mott_variable-range_hopping |
| gptkbp:bfsLayer |
6
|