US patent 5,557,700

GPTKB entity

Properties (49)
Predicate Object
gptkbp:instanceOf patent
gptkbp:abstract A method for producing high purity silicon using a chemical vapor deposition process.
gptkbp:applicationDate June 7, 1995
gptkbp:applicationNumber 08/469,155
gptkbp:assignee The_United_States_of_America_as_represented_by_the_Department_of_Energy
gptkbp:citedBy gptkb:US_patent_6,200,600
gptkb:US_patent_6,248,474
gptkb:US_patent_6,300,000
gptkb:US_patent_6,800,000
gptkb:US_patent_6,500,000
gptkbp:class C30B 29/00
gptkbp:country gptkb:United_States
gptkbp:examiner gptkb:John_Doe
gptkbp:fieldOfUse semiconductors
gptkbp:grantDate September 17, 1996
gptkbp:hasFieldOfUse materials science
research and development
telecommunications
energy
innovation
renewable energy
venture capital
chemical engineering
electronics
manufacturing processes
startups
intellectual property
nanotechnology
computing
industrial processes
photovoltaics
technology transfer
solar cells
patent licensing
microelectronics
commercialization
https://www.w3.org/2000/01/rdf-schema#label US patent 5,557,700
gptkbp:inventor gptkb:Robert_J._McCarthy
gptkbp:issuedOn September 17, 1996
gptkbp:numberOfClaims 20
gptkbp:patentType utility
gptkbp:priorityDate June 7, 1995
gptkbp:relatedTo semiconductor manufacturing
chemical vapor deposition
high purity materials
silicon purification
gptkbp:status active
gptkbp:subclass C30B 29/02
gptkbp:title Method for producing a high purity silicon