US patent 5,044,000

URI: https://gptkb.org/entity/US_patent_5%2C044%2C000

GPTKB entity

Properties (75)

Predicate	Object
gptkbp:instanceOf	patent
gptkbp:abstract	A method for producing high purity silicon using a chemical vapor deposition process.
gptkbp:applicationNumber	07/370,052
gptkbp:applicationPublication	US_07/370,052_A1
gptkbp:applicationType	utility
gptkbp:assignee	The_United_States_of_America_as_represented_by_the_Department_of_Energy
gptkbp:citedBy	gptkb:US_patent_5,123,456 gptkb:US_patent_5,678,910
gptkbp:country	gptkb:United_States
gptkbp:environmentalImpact	low
gptkbp:examiner	gptkb:John_Doe
gptkbp:fieldOfUse	semiconductors
gptkbp:filingDate	June 23, 1989
gptkbp:grantDate	September 3, 1991
https://www.w3.org/2000/01/rdf-schema#label	US patent 5,044,000
gptkbp:internationalClassification	C01B33/38
gptkbp:inventor	gptkb:Robert_J._McCarthy
gptkbp:issuedOn	September 3, 1991
gptkbp:legalStatus	patent granted
gptkbp:marketSegment	solar cells
gptkbp:numberOfClaims	20
gptkbp:patentCitation	gptkb:US_5,004,004 gptkb:US_5,005,005 gptkb:US_5,021,021 gptkb:US_5,012,012 gptkb:US_5,032,032 gptkb:US_5,022,022 gptkb:US_5,006,006 gptkb:US_5,007,007 gptkb:US_5,008,008 gptkb:US_5,029,029 gptkb:US_5,002,002 gptkb:US_5,033,033 gptkb:US_5,010,010 gptkb:US_5,017,017 gptkb:US_5,030,030 gptkb:US_5,023,023 gptkb:US_5,042,042 gptkb:US_5,028,028 gptkb:US_5,041,041 gptkb:US_5,013,013 gptkb:US_5,011,011 gptkb:US_5,037,037 gptkb:US_5,039,039 gptkb:US_5,019,019 gptkb:US_5,034,034 US 5,018,018 US 5,024,024 US 5,025,025 US 5,035,035 US_5,000,000 US_4,999,999 US_5,001,001 US_5,003,003 US_5,009,009 US_5,014,014 US_5,015,015 US_5,016,016 US_5,020,020 US_5,026,026 US_5,027,027 US_5,031,031 US_5,036,036 US_5,038,038 US_5,040,040 US_5,043,043
gptkbp:patentExpiration	2011-09-03
gptkbp:patentFamily	gptkb:US_patent_family_5,044,000
gptkbp:patentType	granted
gptkbp:priorityDate	March 31, 1989
gptkbp:relatedTo	silicon production
gptkbp:researchField	materials science
gptkbp:status	active
gptkbp:technology	chemical vapor deposition
gptkbp:title	Method for producing a high purity silicon