US Patent 3,387,286 (One-Transistor DRAM Cell)
GPTKB entity
Statements (14)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
gptkb:US_patent
|
| gptkbp:application |
gptkb:US_556,803
|
| gptkbp:assignee |
gptkb:International_Business_Machines_Corporation
|
| gptkbp:citation |
foundational patent for DRAM technology
|
| gptkbp:class |
G11C 11/418
|
| gptkbp:country |
gptkb:United_States
|
| gptkbp:date |
June 4, 1968
|
| gptkbp:describes |
one-transistor dynamic random-access memory cell
|
| gptkbp:filingDate |
June 7, 1966
|
| https://www.w3.org/2000/01/rdf-schema#label |
US Patent 3,387,286 (One-Transistor DRAM Cell)
|
| gptkbp:inventedBy |
gptkb:Robert_H._Dennard
|
| gptkbp:title |
gptkb:Field_Effect_Transistor_Memory
|
| gptkbp:bfsParent |
gptkb:Robert_H._Dennard
|
| gptkbp:bfsLayer |
6
|